Modeling of Impact Ionization in a Quasi Deterministic 3D Particle Dynamics Semiconductor Device Simulation Program

K, Tarnay; F, Masszi; T, Kocsis; A, Poppe [Poppe, András (Mikroelektronika), szerző] Budapesti Műszaki Egyetem

Angol nyelvű Tudományos Konferenciaközlemény (Könyvrészlet)
    A first principle based quasi-deterministic 30 particle dynamics Monte Carlo simulation method was developed for examining mesoscopic (subhalf-micron) Si electron devices. Applying a novel method for calculating the field and potential distributions, the real trajectories of the carriers are exactly followed. Consequently, an important feature of this method is Ihat all Coulomb scattering are inherently taken into account. A briel description of the physical background, the models and the simulation principle 1s given. A quasi deterministic model for impact ionization is developed and some results are presented.
    Hivatkozás stílusok: IEEEACMAPAChicagoHarvardCSLMásolásNyomtatás
    2021-11-27 23:54