Examination of MOS Structures by a 3D Particle Dynamics Monte-carlo Simulator Including Electrothermal Effects

Tarnay, K; Gali, A [Gali, Ádám (Szilárdtestfizika), szerző] Budapesti Műszaki Egyetem; Poppe, A [Poppe, András (Mikroelektronika), szerző] Budapesti Műszaki Egyetem; Kocsis, T; Masszi, F

Angol nyelvű Tudományos Szakcikk (Folyóiratcikk)
Megjelent: PHYSICA SCRIPTA 0031-8949 1402-4896 T69 pp. 290-294 1997
    Azonosítók
    Szakterületek:
      The MicroMOS quasi-deterministic particle dynamics 3D Monte-Carlo program for submicron MOS transistors is now extended with electron-phonon interaction models for intervalley scattering and with a carrier-lattice energy exchange model. The impact ionisation and Auger recombination models are also improved. The carrier transport and lattice heat transport problems are self-consistently solved. As example the results of simulation, the spatial distribution of electrons, electron-phonon scattering events, impact ionisation events, Auger recombination events and the lattice temperature are presented. A new, low drain-to-source voltage breakdown effect has been observed.
      Hivatkozás stílusok: IEEEACMAPAChicagoHarvardCSLMásolásNyomtatás
      2021-09-23 08:23