The MicroMOS quasi-deterministic particle dynamics 3D Monte-Carlo program for submicron
MOS transistors is now extended with electron-phonon interaction models for intervalley
scattering and with a carrier-lattice energy exchange model. The impact ionisation
and Auger recombination models are also improved. The carrier transport and lattice
heat transport problems are self-consistently solved. As example the results of simulation,
the spatial distribution of electrons, electron-phonon scattering events, impact ionisation
events, Auger recombination events and the lattice temperature are presented. A new,
low drain-to-source voltage breakdown effect has been observed.