A new form of potential sputtering has been found for impact of slow
(less than or equal to 1500 eV) multiply charged Xe ions (charge states
up to q = 25) on MgOx. In contrast to alkali-halide or SiO2 surfaces
this mechanism requires the simultaneous presence of electronic
excitation of the target material and of a kinetically formed collision
cascade within the target in order to initiate the sputtering process.
This kinetically assisted potential sputtering mechanism has been
identified to be present for ether insulating surfaces as well.