NOVELTY - A front side isotropic porous silicon etching is started from exposed predetermined
domain surface. The etching is continued until predetermined domain portion is fully
underetched, to form a porous silicon sacrificial layer that partially covers predetermined
domain portion. The exposed porous silicon sacrificial layer surface is passivated
when applied with metallic thin film. Metallic contact pieces of circuit component
are formed through CMOS technology steps. The porous silicon sacrificial layer is
chemically dissolved to form micromechanical component after removing thin film.
